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LGE - Schottky Barrier Rectifiers

Numéro de référence SB170
Description Schottky Barrier Rectifiers
Fabricant LGE 
Logo LGE 





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SB170 fiche technique
Features
xxxx
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
SB120-SB1A0
Schottky Barrier Rectifiers
VOLTAGE RANGE: 20 --- 100 V
CURRENT: 1.0 A
DO - 41
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
(see fig.1)
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load @TJ=125
Maximum instantaneous forward voltage
@ 1.0A
VRRM
VRMS
VDC
IF(AV)
SB
120
SB
130
SB
140
SB
150
SB
160
SB
170
SB
180
SB
190
SB
1A0
UNITS
20 30 40 50 60 70 80 90 100 V
14 21 28 35 42 49 56 63 70 V
20 30 40 50 60 70 80 90 100 V
1.0 A
IFSM
40.0
A
VF 0.5
0.7
0.85 V
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=100
IR
Typical junction capacitance (Note1)
CJ
Typical thermal resistance (Note2)
RθJA
Operating junction temperature range
TJ
Storage temperature range
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermalresistance junction to ambient
10.0
110
- 55 --- + 125
0.5
5.0
80
50
- 55 --- + 150
- 55 --- + 150
mA
pF
/W
http://www.luguang.cn

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