|
|
Número de pieza | MBR20H150CT | |
Descripción | Schottky Barrier Rectifiers | |
Fabricantes | LGE | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MBR20H150CT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! MBR20H100CT-MBR20H200CT
20.0AMP. Schottky Barrier Rectifiers
TO-220AB
Features
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply – output rectification, power
management, instrumentation
Guardring for overvoltage protection
High temperature soldering guaranteed:
260oC/10 seconds,0.25”(6.35mm)from case
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Tc=125OC
Peak Repetitive Forward Current (Rated VR,
Square Wave, 20KHz) at Tc=125oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
(Note 2)
IF=10A, TC=25oC
IF=10A, TC=125oC
IF=20A, TC=25oC
IF=20A, TC=125oC
VRRM
VRMS
VDC
I(AV)
IFRM
IFSM
IRRM
VF
Maximum Instantaneous Reverse Current
@ Tc =25 oC at Rated DC Blocking Voltage
@ Tc=125 oC (Note 2)
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance (Note 3)
IR
dV/dt
RθJC
MBR
20H100CT
100
70
100
MBR
20H150CT
150
105
150
20
MBR
20H200CT
200
140
200
20
150
1.0
0.5
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
5
2.0
10,000
1.5
Units
V
V
V
A
A
A
A
V
uA
mA
V/uS
oC/W
Operating Junction Temperature Range
TJ
-65 to +175
oC
Storage Temperature Range
Notes: 1. 2.0us Pulse Width, f=1.0 KHz
TSTG
-65 to +175
oC
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
http://www.luguang.cn
mail:[email protected]
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet MBR20H150CT.PDF ] |
Número de pieza | Descripción | Fabricantes |
MBR20H150CT | Dual Schottky Barrier Rectifier | EIC |
MBR20H150CT | 20.0AMPS. Schottky Barrier Rectifiers | Taiwan Semiconductor |
MBR20H150CT | Schottky Barrier Rectifier ( Diode ) | Inchange Semiconductor |
MBR20H150CT | Dual High-Voltage Schottky Rectifiers | Vishay Siliconix |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |