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Número de pieza | MBRB30H30CT-1G | |
Descripción | Power Rectifiers | |
Fabricantes | ON Semiconductor | |
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No Preview Available ! MBRB30H30CT-1G,
MBR30H30CTG
SWITCHMODE™
Power Rectifiers
30 V, 30 A
Features and Benefits
•ăLow Forward Voltage
•ăLow Power Loss/High Efficiency
•ăHigh Surge Capacity
•ă150°C Operating Junction Temperature
•ă30 A Total (15 A Per Diode Leg)
•ăGuard-Ring for Stress Protection
•ăThis is a Pb-Free Device*
Applications
•ăPower Supply - Output Rectification
•ăPower Management
•ăInstrumentation
Mechanical Characteristics:
•ăCase: Epoxy, Molded
•ăEpoxy Meets UL 94 V-0 @ 0.125 in
•ăWeight: 1.5 Grams (I2PAK) (Approximately)
1.9 Grams (TO-220) (Approximately)
•ăFinish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•ăLead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
©Ă Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 3
1
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 30 VOLTS
1
2, 4
3
4 MARKING
DIAGRAM
1 23
I2PAK (TO-262)
CASE 418D
PLASTIC
AYWW
B30H30G
AKA
4
1
2
3
TO-220AB
CASE 221A
PLASTIC
AYWW
B30H30G
AKA
A = Assembly Location
Y = Year
WW = Work Week
B30H30 = Device Code
G = Pb-Free Package
AKA = Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBRB30H30CT-1G TO-262 50 Units/Rail
(Pb-Free)
MBR30H30CTG
TO-220 50 Units/Rail
(Pb-Free)
Publication Order Number:
MBRB30H30CT-1/D
1 page MBRB30H30CT-1G, MBR30H30CTG
3000
2500
2000
1500
TJ = 25°C
1000
500
0
0 5 10 15 20 25 30
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Typical Capacitance for MBR30H30CTG
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.01
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 8. Thermal Response Junction-to-Case
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
10 100 1000
http://onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet MBRB30H30CT-1G.PDF ] |
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