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Hamamatsu - Si PIN photodiode

Numéro de référence S7481
Description Si PIN photodiode
Fabricant Hamamatsu 
Logo Hamamatsu 





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S7481 fiche technique
PHOTODIODE
Si PIN photodiode
S6431, S6432, S7481, S7482
High-speed detector with surface-mount plastic package
S6431, S6432, S7481 and S7482 are high-speed APC detectors developed for monitoring laser diodes with a peak wavelength shorter than 700
nm. All types are designed for surface mount, and S6431 and S6432 have the terminals for positioning easily.
Features
l High-speed response at low reverse voltage
S6431, S7481 (φ0.8 mm) : 500 MHz Typ. (VR=2.5 V)
S6432, S7482 (φ0.6 mm) : 600 MHz Typ. (VR=2.5 V)
l S6431, S6432: Clear plastic package with wire
connection terminals (4 × 4.8 mm)
l High sensitivity: 0.48 A/W Typ. (λ=660 nm)
Applications
l Laser diode monitor of optical disk unit (high-speed APC)
l Sensor for red laser diode
s General ratings / Absolute maximum ratings
Type No.
S6431
S6432
S7481
S7482
Dimensional
outline
Package
Plastic
Active area
size
(mm)
φ0.8
φ0.6
φ0.8
φ0.6
Effective active
area
(mm2)
0.5
0.28
0.5
0.28
Absolute maximum ratings
Reverse Power Operating Storage
voltage dissipation temperature temperature
VR Max.
P
Topr
Tstg
(V)
(mV)
(°C)
(°C)
20 50 -25 to +85 -40 to +100
s Electrical and optical characteristics
Type No.
Spectral Peak
response sensitivity
range wavelength
λ λp
(nm) (nm)
Photo sensitivity
S
(A/W)
λp
660 780 830
nm nm nm
Short
circuit
current
Isc
100 lx
Dark
current
ID
VR=2.5 V
Temp.
coefficient
of
ID
TCID
Cut-off
frequency
fc
VR=2.5 V
RL=50
Typ. Max.
Min. Typ.
(µA) (nA) (nA) (times/°C) (MHz) (MHz)
Terminal
capacitance
Ct
VR=2.5 V
f=1 MHz
Typ. Max.
(pF) (pF)
NEP
VR=2.5 V
(W/Hz1/2)
S6431
0.48 300 500 6 12
S6432
S7481
320 to
1000
760
0.5
0.48
0.5
0.45
0.25
0.48
0.01 0.3
1.15
400 600
300 500
3
6
6
12
3.6 × 10-15
S7482
0.25 400 600 3 6
*1: λ=680 nm

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