AP10TN135N Datasheet PDF - Advanced Power Electronics
| Part Number | AP10TN135N | |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Manufacturers | Advanced Power Electronics | |
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Advanced Power
Electronics Corp.
AP10TN135N
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
D
▼ Low Gate Charge
▼ RoHS Compliant & Halogen-Free
S
SOT-23 G
Description
AP10TN135 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide range
of power applications.
The special design SOT-23 package with good thermal
performance is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
BVDSS
RDS(ON)
ID
100V
135mΩ
3A
D
G
S
Absolute
Symbol
Maximum
RatingPsar@amTejt=er25o.C(unless
otherwise specified)
Rating
Units
VDS
VGS
ID@TC=25℃
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
100
+20
3
2.1
1.7
10
1.38
-55 to 150
-55 to 150
V
V
A
A
A
A
W
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
45
90
Unit
℃/W
℃/W
1
201504202
|
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AP10TN135N
2
I D =1mA
1.6
1.2
0.8
0.4
0
-100 -50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 13. Normalized BVDSS v.s. Junction
Temperature
200
T j =25 o C
180
160
.4.5V
140
V GS =10V
120
100
0 3 6 9 12
I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
2
1.5
1
0.5
0
0 50 100
T A , Ambient Temperature( o C)
Fig 14. Total Power Dissipation
150
4
3
2
1
0
25 50 75 100 125
T C , Case Temperature ( o C )
Fig 16. Drain Current v.s. Case
Temperature
150
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for AP10TN135N electronic component. |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ AP10TN135N.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| AP10TN135N | The function is N-CHANNEL ENHANCEMENT MODE POWER MOSFET. Advanced Power Electronics | |
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