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Numéro de référence | AP11N50I | ||
Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
Fabricant | Advanced Power Electronics | ||
Logo | |||
Advanced Power
Electronics Corp.
AP11N50I
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
Description
AP11N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
VDS @ Tj,max.
RDS(ON)
ID
550V
0.68Ω
11A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS
ID@TC=25℃
ID@TC=100℃
IDM
Gate-Source Voltage
Drain Current, VGS @ 10V4
Drain Current, VGS @ 10V4
Pulsed Drain Current1
+30 V
11 A
5.6 A
40 A
PD@TC=25℃
EAS
Total Power Dissipation
Single Pulse Avalanche Energy2
40 W
21.8 mJ
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.2
65
Units
℃/W
℃/W
1
201409184
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Pages | Pages 5 | ||
Télécharger | [ AP11N50I ] |
No | Description détaillée | Fabricant |
AP11N50I | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
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