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Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP15TP1R0Y
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP15TP1R0Y fiche technique
Advanced Power
Electronics Corp.
AP15TP1R0Y
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Fast Switching Characteristic
Lower Gate Charge
Small Footprint & Low Profile Package
RoHS Compliant & Halogen-Free
S
D
D
SOT-26
G
D
D
Description
AP15TP1R0 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
BVDSS
RDS(ON)
ID3
G
-150V
1Ω
-1A
D
S
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
-150
V
VGS
ID@TA=25
ID@TA=70
IDM
Gate-Source Voltage
Drain Current3, VGS @ 10V
Drain Current3, VGS @ 10V
Pulsed Drain Current1
+25
-1
-0.78
-4
V
A
A
A
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
2
-55 to 150
-55 to 150
W
Thermal Data
Symbol
Parameter
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
Data and specifications subject to change without notice
Value
62.5
Unit
/W
1
201507151

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