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AP16N50P-HF fiches techniques PDF

Advanced Power Electronics - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP16N50P-HF
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP16N50P-HF fiche technique
Advanced Power
Electronics Corp.
AP16N50P-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low On-resistance
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP16N50 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
BVDSS
RDS(ON)
ID
500V
0.4Ω
16A
G
DS
TO-220(P)
Absolute Maximum Ratings@Tj=25oC. (unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
500 V
VGS Gate-Source Voltage
+30 V
ID@TC=25
ID@TC=100
IDM
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
16 A
11 A
60 A
PD@TC=25
EAS
Total Power Dissipation
Single Pulse Avalanche Energy3
173.6
75
W
mJ
TSTG
Storage Temperature Range
-55 to 150
TJ
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
0.72
62
Units
/W
/W
1
201501133

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