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AP18P10AGH-HF fiches techniques PDF

Advanced Power Electronics - P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Numéro de référence AP18P10AGH-HF
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricant Advanced Power Electronics 
Logo Advanced Power Electronics 





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AP18P10AGH-HF fiche technique
Advanced Power
Electronics Corp.
AP18P10AGH/J-HF
Halogen-Free Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
D
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
BVDSS
RDS(ON)
ID
-100V
140mΩ
-12A
G D S TO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP18P10AGJ) is
available for low-profile applications.
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
-100
+30
-12
-7.4
-48
39
2
-55 to 150
-55 to 150
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
3.2
62.5
110
Units
/W
/W
/W
1
201501133

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