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CTLSH01-30 fiches techniques PDF

Central Semiconductor - SURFACE MOUNT SILICON SCHOTTKY DIODES

Numéro de référence CTLSH01-30
Description SURFACE MOUNT SILICON SCHOTTKY DIODES
Fabricant Central Semiconductor 
Logo Central Semiconductor 





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CTLSH01-30 fiche technique
CTLSH01-30
SURFACE MOUNT
SILICON SCHOTTKY DIODE
TLM2D3D6 CASE
APPLICATIONS:
DC - DC Converters
Voltage Clamping
• Protection Circuits
• Battery powered applications including
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
MAXIMUM RATINGS: (TA=25°C)
Peak Repetitive Reverse Voltage
Average Forward Current
Peak Forward Surge Current, tp=8.3ms
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CTLSH01-30 is a
high quality Schottky Diode designed for applications
where ultra small size and power dissipation are
prime requirements. Packaged in a Ultra Tiny
Leadless Package™, TLP™, this component provides
performance characteristics suitable for the most
demanding size constrained applications.
MARKING CODE: C
FEATURES:
Current (IO=100mA)
Low Forward Voltage Drop (VF=0.41V TYP @ 10mA)
Low Reverse Current (30nA TYP @ 10V)
Ultra Small, Ultra Low Profile 0.3mm x 0.6mm x 0.3mm
TLPLeadless Surface Mount package
SYMBOL
VRRM
IO
IFSM
PD
TJ
Tstg
ΘJA
30
100
500
100
-65 to +125
-65 to +150
1000
UNITS
V
mA
mA
mW
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP
IR
BVR
VF
CT
VR=10V
IR=100µA
IF=10mA
VR=0, f=1.0MHz
30
30
0.41
7.0
MAX
300
0.46
UNITS
nA
V
V
pF
R3 (20-April 2011)

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