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Número de pieza | PMEG4010ESB | |
Descripción | low VF MEGA Schottky barrier rectifier | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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40 V, 1 A low VF MEGA Schottky barrier rectifier
24 June 2015
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993)
Surface-Mounted Device (SMD) package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 1 A
• Reverse voltage: VR ≤ 40 V
• Low forward voltage, typical: VF = 510 mV
• Low reverse current, typical: IR = 13 µA
• Package height typ. 270 µm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Low power consumption applications
• Ultra high-speed switching
• LED backlight for mobile application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 140 °C;
square wave
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 40 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
Min Typ Max Unit
- - 1A
- - 40 V
- 510 610 mV
-
2.1 6
µA
- 13 40 µA
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1 page NXP Semiconductors
102
Zth(j-a)
(K/W)
10
duty cycle =
1
0.75
0.5
0.25
0.1
0.05
0.33
0.2
0.02
0 0.01
PMEG4010ESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
aaa-016802
1
10-3
10-2
10-1
Ceramic PCB, Al2O3, standard footprint
1
10 102 103
tp (s)
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
10. Characteristics
Table 7.
Symbol
V(BR)R
VF
Characteristics
Parameter
reverse breakdown
voltage
forward voltage
IR reverse current
Conditions
IR = 1 mA; tp = 300 µs; δ = 0.02;
Tj = 25 °C
IF = 1 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 10 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 100 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 500 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 700 mA; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C
VR = 5 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 10 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 20 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
VR = 40 V; tp ≤ 3 ms; δ ≤ 0.3; Tj = 25 °C
PMEG4010ESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
Min Typ Max Unit
40 - - V
- 205 - mV
- 270 - mV
- 340 385 mV
- 370 - mV
- 430 495 mV
- 465 - mV
- 510 610 mV
- 0.8 - µA
- 1 4 µA
-
2.1 6
µA
- 13 40 µA
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 14
5 Page NXP Semiconductors
PMEG4010ESB
40 V, 1 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
PMEG4010ESB v.2 20150624
Product data sheet
-
Modifications:
• Product status changed
PMEG4010ESB v.1 20150512
Preliminary data sheet -
Supersedes
PMEG4010ESB v.1
-
PMEG4010ESB
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 June 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 14
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