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PMZB290UNE2 fiches techniques PDF

NXP Semiconductors - N-channel Trench MOSFET

Numéro de référence PMZB290UNE2
Description N-channel Trench MOSFET
Fabricant NXP Semiconductors 
Logo NXP Semiconductors 





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PMZB290UNE2 fiche technique
PMZB290UNE2
20 V, N-channel Trench MOSFET
24 March 2015
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
Low threshold voltage
Very fast switching
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra thin package profile of 0.37 mm
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 1.2 A; Tj = 25 °C
Min Typ Max Unit
- - 20 V
-8 -
8V
[1] - - 1.2 A
- 270 320 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2.
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