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Numéro de référence | RB160VA-40 | ||
Description | Schottky Barrier Diode | ||
Fabricant | ROHM Semiconductor | ||
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1 Page
Schottky Barrier Diodes
RB160VA-40
Applications
General rectification
Dimensions (Unit : mm)
1.3±0.05
0.1 7±0.1
0.05
Features
1) Small mold type. (TUMD2)
2) Low VF, Low IR.
3) High reliability.
Construction
Silicon epitaxial planar
0.8±0 .05
ROHM : TUMD2
0.6±0 .2
0.1
dot (year week factory) + day
Land size figure (Unit : mm)
1.1
TUMD2
Structure
Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.1
0.05
0.25±0.05
1.43±0.05
4.0±0.1
φ1.0±0.2
0
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz・1cyc)
Forward current surge peak(t=100μs・1cyc)
Junction temperature
IFSM
IFSM
Tj
Storage temperature
Tstg
Limits
40
40
1
5
10
150
-40 to +150
Unit
V
V
A
A
A
℃
℃
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
Forward voltage
VF - 0.50
Reverse current
IR - 1.5
Max.
0.55
50
Unit Conditions
V IF=700mA
μA VR=40V
0.9±0.08
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©2010 ROHM Co., Ltd. All rights reserved.
1/3
2010.06 - Rev.D
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Pages | Pages 4 | ||
Télécharger | [ RB160VA-40 ] |
No | Description détaillée | Fabricant |
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