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RB530VM-30FH fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB530VM-30FH
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB530VM-30FH fiche technique
Schottky Barrier Diode
RB530VM-30FH
Applications
General rectification
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Datasheet
AEC-Q101 Qualified
Land size figure (Unit : mm)
0.9MIN.
Features
1)Ultra small mold type. (UMD2)
2)High reliability
Construction
Silicon epitaxial planer
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-90/A
dot (year week factory)
UMD2
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ1.05
Limits
30
30
100
500
150
40 to 150
Unit
V
V
mA
mA
C
C
1.0±0.1
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF -
- 0.45
Reverse current
IR - - 0.5
Unit Conditions
V IF=10mA
μA VR=10V
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/4
2015.04 - Rev.B

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