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RGT30NS65D fiches techniques PDF

ROHM Semiconductor - Field Stop Trench IGBT

Numéro de référence RGT30NS65D
Description Field Stop Trench IGBT
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RGT30NS65D fiche technique
RGT30NS65D
650V 15A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
15A
1.65V
133W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
LPDS (TO-263S)
(2)
(1)
(3)
lInner Circuit
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
General Inverter
lPackaging Specifications
Packaging
Reel Size (mm)
Taping
330
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
24
1,000
Welder
Taping Code
TL
Marking
RGT30NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
30
15
45
26
15
45
133
66
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.A

PagesPages 11
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