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ROHM Semiconductor - Field Stop Trench IGBT

Numéro de référence RGTH00TS65
Description Field Stop Trench IGBT
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RGTH00TS65 fiche technique
RGTH00TS65
650V 50A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.6V
277W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
lOutline
TO-247N
lInner Circuit
(2)
(1)(2)(3)
(1)
(1) Gate
(2) Collector
(3) Emitter
(3)
lApplications
PFC
lPackaging Specifications
Packaging
Tube
UPS
Reel Size (mm)
-
Power Conditioner
IH
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
Taping Code
C11
Marking
RGTH00TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
PD
PD
Tj
Tstg
650
30
85
50
200
277
138
-40 to +175
-55 to +175
V
V
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/9
2014.05 - Rev.B

PagesPages 9
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