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Datasheet RGTH50TS65-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
RGT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | RGT00TS65D | Field Stop Trench IGBT RGT00TS65D
650V 50A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 50A 1.65V 277W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO  ROHM Semiconductor igbt | | |
| 2 | RGT16NS65D | Field Stop Trench IGBT RGT16NS65D
650V 8A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 8A
1.65V 94W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
LPDS ROHM Semiconductor igbt | | |
| 3 | RGT30NS65D | Field Stop Trench IGBT RGT30NS65D
650V 15A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 15A 1.65V 133W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
LP ROHM Semiconductor igbt | | |
| 4 | RGT40NS65D | Field Stop Trench IGBT RGT40NS65D
650V 20A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 20A 1.65V 161W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
LP ROHM Semiconductor igbt | | |
| 5 | RGT40TS65D | Field Stop Trench IGBT RGT40TS65D
650V 20A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 20A 1.65V 144W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO ROHM Semiconductor igbt | | |
| 6 | RGT50TS65D | Field Stop Trench IGBT RGT50TS65D
650V 25A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 25A 1.65V 174W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO ROHM Semiconductor igbt | | |
| 7 | RGT60TS65D | Field Stop Trench IGBT RGT60TS65D
650V 30A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 30A 1.65V 194W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO ROHM Semiconductor igbt | |
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