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What is RGTH50TS65D?

This electronic component, produced by the manufacturer "ROHM Semiconductor", performs the same function as "Field Stop Trench IGBT".


RGTH50TS65D Datasheet PDF - ROHM Semiconductor

Part Number RGTH50TS65D
Description Field Stop Trench IGBT
Manufacturers ROHM Semiconductor 
Logo ROHM Semiconductor Logo 


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RGTH50TS65D
650V 25A Field Stop Trench IGBT
Data Sheet
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
25A
1.6V
174W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1
(1)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
PFC
lPackaging Specifications
Packaging
Reel Size (mm)
Tube
-
UPS
Power Conditioner
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
-
450
IH
Taping Code
C11
Marking
RGTH50TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
TC = 25°C
TC = 100°C
Diode Forward Current
Diode Pulsed Forward Current
TC = 25°C
TC = 100°C
Power Dissipation
Operating Junction Temperature
TC = 25°C
TC = 100°C
Storage Temperature
*1 Pulse width limited by Tjmax.
VCES
VGES
IC
IC
ICP*1
IF
IF
IFP*1
PD
PD
Tj
Tstg
650
30
50
25
100
35
20
100
174
87
-40 to +175
-55 to +175
V
V
A
A
A
A
A
A
W
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/11
2014.05 - Rev.B

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RGTH50TS65D equivalent
RGTH50TS65D
lElectrical Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
200
180
160
140
120
100
80
60
40
20
0
0
25 50 75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.2 Collector Current vs. Case Temperature
60
50
40
30
20
 10
Tj175ºC
VGE15V
0
0 25 50
75 100 125 150 175
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
10µs
100
10
100µs
1
0.1
0.01
1
TC= 25ºC
Single Pulse
10
100 1000
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
140
120
100
80
60
40
20 Tj175ºC
VGE=15V
0
0 200 400 600 800
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.B


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for RGTH50TS65D electronic component.


Information Total 11 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
RGTH50TS65The function is Field Stop Trench IGBT. ROHM SemiconductorROHM Semiconductor
RGTH50TS65DThe function is Field Stop Trench IGBT. ROHM SemiconductorROHM Semiconductor

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