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ROHM Semiconductor - SiC Schottky Barrier Diode

Numéro de référence SCS212AGHR
Description SiC Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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SCS212AGHR fiche technique
SCS212AGHR
SiC Schottky Barrier Diode
VR 650V
IF 12A
QC 18nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer Schottky diode
lAEC-Q101 Qualified
TO-220AC
(1)
Data Sheet
lInner circuit
(2) (3)
(1)
(1) Cathode
(2) Cathode
(3) Anode
(2) (3)
lPackaging specifications
Packaging
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
Marking
Tube
-
-
50
C
SCS212AG
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Symbol
Value
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Surge no repetitive forward current
Repetitive peak forward current
Total power disspation
VRM 650 V
VR 650 V
IF
12*1
A
45*2
A
IFSM 170*3 A
36*4
A
IFRM
49*5
A
PD
93*6
W
Junction temperature
Tj 175 °C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Tc=134°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C
*4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
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© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.05 - Rev.A

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