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Numéro de référence | DMN3018SFGQ | ||
Description | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
Fabricant | Diodes | ||
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1 Page
DMN3018SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) max
21mΩ @ VGS = 10V
35mΩ @ VGS = 4.5V
ID max
TA = +25°C
8.5A
6.6A
Description
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP.
Features and Benefits
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
Backlighting
Power Management Functions
DC-DC Converters
S Pin 1
S
S
G
Mechanical Data
Case: POWERDI®3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish Matte Tin Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.072 grams (Approximate)
D
G
ESD PROTECTED
D
D
D
D
Bottom View
VieD
D
D
D
View
S Pin 1
S
S
G
1
2
3
4
8
w7
6
5
Ordering Information (Note 5)
Top View
Vie
S Pin 1
S
S
G
D
D
D
D
w
1
2
3
4
8
7
6
5
Gate Protection
Diode
S
Top View
Internal Schematic
Notes:
Part Number
DMN3018SFGQ-7
DMN3018SFGQ-13
Case
POWERDI®3333-8
POWERDI®3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN3018SFGQ
Document number: DS38691 Rev. 1 - 2
N38
N38 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 11 = 2011)
WW = Week Code (01 to 53)
1 of 6
www.diodes.com
March 2016
© Diodes Incorporated
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Pages | Pages 6 | ||
Télécharger | [ DMN3018SFGQ ] |
No | Description détaillée | Fabricant |
DMN3018SFG | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
DMN3018SFGQ | N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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