KTD1304 Datasheet PDF - SeCoS
| Part Number | KTD1304 | |
| Description | NPN Plastic Encapsulated Transistor | |
| Manufacturers | SeCoS | |
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Elektronische Bauelemente
KTD1304
0.3 A, 25 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
z High emitter-base voltage: VEBO=12V(Min)
z low on resistance: Ron=0.6Ω(max)(IB=1mA)
PACKAGE DIMENSIONS
1
Base
3 Collector
2 Emitter
A
L
3
Top View
12
VG
BS
D
K
J
C
H
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ, TSTG
Ratings
25
20
12
300
200
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
CHARACTERISTICS at Ta = 25°C
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1 (FORWARD)
hFE1 (REVERSE)
VCE(sat)
VBE(sat)
fT
COB
R(ON)
Min.
25
20
12
-
-
200
20
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
60
10
0.6
Max.
-
-
-
0.1
0.1
1000
-
0.25
1
-
-
-
Unit
V
V
V
uA
uA
V
V
MHz
pF
Ω
Test Conditions
IC = 100 uA
IC = 1 mA
IE = 100 uA
VCB = 25 V
VEB = 12 V
VCE = 2 V, IC=4 mA
VCE = 2 V, IC=4 mA
IC =100 mA, IB=10 mA
IC =100 mA, IB=10 mA
VCE = 10 V, IC = 1 mA, f = 100 MHz
VCB = 10 V, IE = 0, f = 1 MHz
VIN=0.3 V, IB=1mA, f=1KHz
01-June-2005 Rev. A
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for KTD1304 electronic component. |
| Information | Total 2 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Product Image and Detail view |  1. = 12V, Silicon NPN Transistor [ Learn More ] | |
| Download | [ KTD1304.PDF Datasheet ] | |
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