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PDF MMBT2222AT Data sheet ( Hoja de datos )
| Número de pieza | MMBT2222AT | |
| Descripción | NPN Transistor | |
| Fabricantes | WEJ | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MMBT2222AT (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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RoHS
MMBT2222AT
MMBT2222AT TRANSISTOR (NPN)
SOT-523
FEATURES
1. BASE
Power dissipation
PCM:
0.15 W (Tamb=25℃)
DCollector current
ICM: 0.6 A
TCollector-base voltage
V(BR)CBO:
75 V
.,LOperating and storage junction temperature range
2. EMITTER
3. COLLECTOR
TJ, Tstg: -55℃ to +150℃
OELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
CCollector-base breakdown voltage
Collector-emitter breakdown voltage
ICEmitter-base breakdown voltage
Collector cut-off current
NCollector cut-off current
Emitter cut-off current
RODC current gain
CTCollector-emitter saturation voltage
LEBase-emitter saturation voltage
ETransition frequency
Output Capacitance
JDelay time
ERise time
WStorage time
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
Ic= 10µA, IE=0
Ic= 10mA, IB=0
IE=10µA, IC=0
VCB=70V, IE=0
VCE=35V, IB=0
VEB= 3V, IC=0
VCE=10V, IC= 0.1mA
VCE=10V, IC= 1mA
VCE=10V, IC= 10mA
VCE=10V, IC= 150mA
VCE=10V, IC= 500mA
IC=150 mA, IB= 15mA
IC=500 mA, IB= 50mA
IC=150 mA, IB=15mA
IC=500 mA, IB= 50mA
VCE=20V, IC= 20mA
f=100MHz
VCB=10V, IE= 0
f=1MHz
VCC=30V, IC=150mA
VBE(off)=0.5V, IB1=15mA
VCC=30V, IC=150mA
75
40
6
35
50
75
100
40
300
0. 1
0. 1
0. 1
0.3
1
1.2
2
8
10
25
225
UNIT
V
V
V
µA
µA
µA
V
V
V
V
MHz
pF
nS
nS
nS
Fall time
tf IB1= IB2= 15mA
60 nS
Marking
:1P
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet MMBT2222AT.PDF ] | |
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