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Silicon Standard - SCHOTTKY BARRIER RECTIFIERS

Numéro de référence SS215
Description SCHOTTKY BARRIER RECTIFIERS
Fabricant Silicon Standard 
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SS215 fiche technique
SS22-SS215
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
2.0 AMPS Surface Mount
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260 oC / 10 seconds at terminals
MECANICAL DATA
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
.209(5.30)
.201(5.10)
.012(.31)
.006(.15)
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS
22 23 24 25 26 29 210
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
VDC 20 30 40 50 60 90 100
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
I(AV)
2.0
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
IFSM
50
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 2.0A @ 25oC
@ 100oC
VF
0.5
0.4
0.70 0.85
0.65 0.70
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage @ TA=125 oC
IR
0.4
10
0.1
5.0
Typical Junction Capacitance (Note 3)
Cj
130
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
R θJL
R θJA
TJ
TSTG
-65 to +125
17
75
-65 to +150
-65 to +150
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas.
3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
SS
215
150
105
150
0.95
0.80
Units
V
V
V
A
A
V
mA
mA
pF
oC/W
oC
oC
04/05/2007 Rev.1.00
www.SiliconStandard.com
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