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PDF SS39 Data sheet ( Hoja de datos )
| Número de pieza | SS39 | |
| Descripción | SCHOTTKY BARRIER RECTIFIERS | |
| Fabricantes | Silicon Standard | |
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Hay una vista previa y un enlace de descarga de SS39 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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SS32-SS315
SCHOTTKY BARRIER RECTIFIERS
PRODUCT SUMMARY
3.0 AMPS Surface Mount
FEATURES
For surface mounted application
Easy pick and place
Metal to silicon rectifier, majority carrier conduction
Low power loss, high efficiency
High current capability, low VF
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
o
260 C / 10 seconds at terminals
SMC/DO-214AB
.126(3.20)
.114(2.90)
.245(6.22)
.220(5.59)
.103(2.62)
.079(2.00)
.063(1.6)
.039(1.0)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
.320(8.13)
.305(7.75)
MECANICAL DATA
Case: JEDEC DO-214AB Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.21gram
Dimensions in inches and (millimeters)
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SS SS SS SS SS SS SS
32 33 34 35 36 39 310
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
20 30 40 50 60 90 100
3.0
100 70
Maximum Instantaneous Forward Voltage
(Note 1)
IF= 3.0A @ 25oC
VF
0.5
0.75 0.85
@ 100oC
0.4 0.65 0.70
Maximum DC Reverse Current @ TA =25 oC at
Rated DC Blocking Voltage
@ TA=125 oC
IR
0.5
10
5
0.1
0.5
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
R θJL
R θJA
TJ
TSTG
-55 to +125
17
55
-55 to +150
-55 to +150
Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle
SS
315
150
105
150
0.95
0.80
Units
V
V
V
A
A
V
mA
mA
oC/W
oC
oC
04/05/2007 Rev.1.00
www.SiliconStandard.com
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet SS39.PDF ] | |
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