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RJK0629DPE fiches techniques PDF

Renesas - N-Channel Power MOS FET

Numéro de référence RJK0629DPE
Description N-Channel Power MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK0629DPE fiche technique
RJK0629DPE
60V, 85A, 4.5m max.
N Channel Power MOS FET
High-Speed Switching Use
Features
VDSS: 60 V
RDS(on): 4.5 m(Max)
ID: 85 A
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
1G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C, Tch 150C, L = 100 H
3. Value at Tc = 25C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
I Note2
AP
Pch Note3
ch-c
Tch
Tstg
Preliminary Datasheet
R07DS1060EJ0200
(Previous: REJ03G1874-0100)
Rev.2.00
Apr 09, 2013
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Value
60
20
85
340
85
340
55
100
1.25
150
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
W
C/W
C
C
R07DS1060EJ0200 Rev.2.00
Apr 09, 2013
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