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Numéro de référence | RJK0654DPB | ||
Description | N-Channel Power MOS FET | ||
Fabricant | Renesas | ||
Logo | |||
1 Page
RJK0654DPB
60V, 30A, 8.3m nax.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
RDS(on) = 6.5 m typ. (at VGS = 10 V)
Pb-free
Halogen-free
High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
1 234
4
G
Preliminary Datasheet
R07DS1052EJ0200
(Previous: REJ03G1880-0100)
Rev.2.00
Apr 09, 2013
5
D
SSS
123
1, 2, 3 Source
4 Gate
5 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
VDSS
VGSS
ID
ID(pulse)Note1
IDR
IAP Note 2
EAS Note 2
Pch Note3
Channel to Case Thermal Resistance
ch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 s, duty cycle 1%
2. Value at L=10uH, Tch = 25C, Rg 50
3. Tc = 25C
Ratings
60
20
30
120
30
30
6.8
55
2.27
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1052EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
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Pages | Pages 7 | ||
Télécharger | [ RJK0654DPB ] |
No | Description détaillée | Fabricant |
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