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PDF RQJ0301HGDQS Data sheet ( Hoja de datos )
| Número de pieza | RQJ0301HGDQS | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RQJ0301HGDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “HG”.
REJ03G1265-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–30
+10 / –20
–5.2
–7.6
–5.2
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6
1 page  
RQJ0301HGDQS
Dynamic Input Characteristics
0
VDS
0
–20
VDD = –10 V
–40 –25 V
VDD = –25 V
–10 V
–4
–8
–60
–80
–100
0
VGS –12
–16
ID = –5.2 A
Tc = 25°C
–20
4 8 12 16 20
Gate Charge Qg (nC)
10000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
–0 –10 –20 –30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–6
–5
–10V
Pulse Test
Tc = 25°C
–4
–5V
–3
–2
VGS = 0 V,5 V
–1
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source Drain Voltage VSD (V)
1000
Switching Characteristics
tr
100
td(on)
td(off)
10 VDD = –10 V
VGS = –10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
1
–0.01
–0.1
tf
–1 –10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
1500
1400
VDS = 0 V
f = 1 MHz
1300
1200
1100
1000
–10 –5 0 5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.8
–0.7
VGS = 0
–0.6
–0.5
ID = –10 mA
–0.4
–0.3
–1 mA
–0.2
–0.1
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RQJ0301HGDQS.PDF ] | |
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