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Datasheet RQJ0304DQDQS-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


RQJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1RQJ0201UGDQASilicon P-Channel MOS FET

RQJ0201UGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 53 mΩ typ (VGS = –4.5 V, ID = –1.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “UG�
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2RQJ0202VGDQASilicon P Channel MOS FET Power Switching

Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 83 mΩ typ (VGS = –4.5 V, ID = –1.4 A) • Low drive current • High speed switching • 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014 Outline RENESAS Package code: P
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3RQJ0203WGDQASilicon P-Channel MOS FET

RQJ0203WGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 142 mΩ typ (VGS = –4.5 V, ID = –1.1 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “WG
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4RQJ0204XGDQASilicon P-Channel MOS FET

RQJ0204XGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 219 mΩ typ (VGS = –4.5 V, ID = –0.8 A) • Low drive current • High speed switching • 2.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “XG
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5RQJ0301HGDQSSilicon P-Channel MOS FET

RQJ0301HGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 38 m Ω typ (VGS = –10 V, ID = –2.6 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is
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6RQJ0302NGDQASilicon P-Channel MOS FET

RQJ0302NGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG�
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7RQJ0303PGDQAP-Channel MOSFE, Transistor

Preliminary Datasheet RQJ0303PGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 54 mΩ typ (VGS = –10 V, ID = –1.6 A) • Low drive current • High speed switching • 4.5 V gate drive R07DS0295EJ0600 Rev.6.00 Jan 10, 2014 Outline RENESAS Package code: PL
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Número de pieza Descripción Fabricantes PDF
SPS122

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