|
|
Número de pieza | RQJ0305EQDQA | |
Descripción | Silicon P-Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RQJ0305EQDQA (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! RQJ0305EQDQA
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Notes: Marking is "EQ".
Preliminary Datasheet
R07DS0297EJ0300
Rev.3.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
–30
+8 / –12
–2.4
–10
2.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0297EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8
1 page RQJ0305EQDQA
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–10 –2
VDD = –10 V
–25 V
–20 –4
–30
ID = –2.4 A
Tc = 25°C
–40
0 1234
Gate Charge Qg (nC)
–6
–8
5
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
–0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
Tc = 25°C
–8
–10 V
–6 –2.5, –4.5 V
–4
–0 V
–2
VGS = 2.5, 4.5, 10 V
0
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Source to Drain Voltage VSD (V)
1000
100
10
Preliminary
Switching Characteristics
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
tr
td(off)
td(on)
tf
1
–0.01
–0.1 –1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
700
650
600
550
500
450 VDS = 0
f = 1MHz
400
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
VGS = 0
–0.5
–0.4
–0.3
ID = –10 mA
–1 mA
–0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0297EJ0300 Rev.3.00
Jan 10, 2014
Page 5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet RQJ0305EQDQA.PDF ] |
Número de pieza | Descripción | Fabricantes |
RQJ0305EQDQA | Silicon P-Channel MOS FET | Renesas |
RQJ0305EQDQS | Silicon P-Channel MOS FET | Renesas |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |