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Número de pieza | RQJ0306FQDQS | |
Descripción | Silicon P-Channel MOS FET | |
Fabricantes | Renesas | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RQJ0306FQDQS (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RQJ0306FQDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low gate drive
VDSS : –30 V and 2.5 V gate drive
• Low drive current
• High speed switching
• Small traditional power package (UPAK)
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
1G
Notes: Marking is "FQ".
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
REJ03G1780-0100
Rev.1.00
Mar 16, 2009
2, 4
D
1. Gate
2. Drain
3. Source
4. Drain
S
3
Ratings
–30
+8 / –12
–4
–16
4
1.5
83
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C /W
°C
°C
REJ03G1780-0100 Rev.1.00 Mar 16, 2009
Page 1 of 7
1 page RQJ0306FQDQS
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–10 –2
VDD = –10 V
–20
–25 V
–4
–30
ID = –3 A
Tc = 25°C
–40
0 2468
Gate Charge Qg (nC)
–6
–8
10
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100 Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
–0 –5 –10 –15 –20 –25 –30
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
Tc = 25°C
–8
–6 –10 V
–4.5 V
–4
–2.5 V
–2 –0 V
VGS = 2.5, 4.5, 10 V
0
0 –0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Source to Drain Voltage VSD (V)
1000
Switching Characteristics
100 tr
td(off)
td(on)
10 tf
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
1
–0.01
–0.1
–1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
950
900
850
800
750
700 VDS = 0
f = 1MHz
650
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.6
VGS = 0
–0.5
–0.4
–0.3
ID = –10 mA
–1 mA
–0.2
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
REJ03G1780-0100 Rev.1.00 Mar 16, 2009
Page 5 of 7
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RQJ0306FQDQS.PDF ] |
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