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PDF RQJ0601DGDQS Data sheet ( Hoja de datos )
| Número de pieza | RQJ0601DGDQS | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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RQJ0601DGDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “DG”.
REJ03G1266-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–60
+10 / –20
–2.8
–4.2
–2.8
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6
1 page  
RQJ0601DGDQS
Dynamic Input Characteristics
0
VDD = –10 V
0
–20 –4
–40 –25 V
–50 V
–60 VDS
VGS
VDD = –50 V
–25 V
–8
–12
–80 ID = –2.8 A –10 V
Tc = 25°C
–100
04
8 12
16
Gate Charge Qg (nC)
–16
–20
20
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
Crss
10
VGS = 0 V
f = 1 MHz
1
–0 –10 –20 –30 –40 –50 –60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–2.5
–10V
–2
Pulse Test
Tc = 25°C
–1.5
–1
–5V
–0.5
VGS = 0 V, 5 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source Drain Voltage VSD (V)
1000
Switching Characteristics
tf
100
td(on)
10 tr
1
–0.01
td(off)
–0.1
VDD = –10 V
VGS = –10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
–1 –10
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
900
850
800
750
700
VDS = 0 V
f = 1 MHz
650
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.9
–0.8
VGS = 0
–0.7
ID = –1 A
–0.6
–0.5
–10 mA
–0.4
–0.3
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RQJ0601DGDQS.PDF ] | |
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