|
|
PDF RQJ0602EGDQS Data sheet ( Hoja de datos )
| Número de pieza | RQJ0602EGDQS | |
| Descripción | Silicon P-Channel MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RQJ0602EGDQS (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
RQJ0602EGDQS
Silicon P Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 485 mΩ typ (VGS = –10 V, ID = –0.75 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R )
1
2
3
4
Note: Marking is “EG”.
REJ03G1268-0300
Rev.3.00
Jun 05, 2006
2, 4
D
1. Gate
1 G 2. Drain
3. Source
4. Drain
S
3
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
Channel dissipation
IDR
Pch Note2
Pch
Note1
(pulse)
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Ratings
–60
+10 / –20
–1.5
–2.2
–1.5
1.5
5
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00 Jun 05, 2006 page 1 of 6
1 page  
RQJ0602EGDQS
Dynamic Input Characteristics
00
VDD = –10 V
–25 V
–20
ID = –1.5 A
Tc = 25°C –4
–40
–50 V
VDS
–60
–80
0
2
VDD = –50 V
–25 V
–10 V
VGS
46
Gate Charge Qg (nC)
–8
–12
–16
8
1000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
100
Coss
10
Crss
VGS = 0 V
f = 1 MHz
1
–0 –10 –20 –30 –40 –50 –60
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
–2.0
–1.5
–10V
Pulse Test
Tc = 25°C
–1.0
–0.5
–5V
VGS = 0 V, 5 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source Drain Voltage VSD (V)
1000
100
Switching Characteristics
td(off)
VDD = –10 V
VGS = –10 V
Rg = 4.7 Ω
PW = 5 µs
Tc = 25°C
10 td(on)
tr
tf
1
–0.01
–0.1 –1
Drain Current ID (A)
–10
Input Capacitance vs.
Gate to Source Voltage
230
220
210
200
190
180
170
160
–10
–5
VDS = 0 V
f = 1 MHz
0 5 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
–0.8
VGS = 0
–0.7
–0.6
–0.5
ID = –10 mA
–0.4
–1 A
–0.3
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet RQJ0602EGDQS.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RQJ0602EGDQA | Silicon P-Channel MOS FET | Renesas |
| RQJ0602EGDQS | Silicon P-Channel MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |