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PDF RQK2001HQDQA Data sheet ( Hoja de datos )

Número de pieza RQK2001HQDQA
Descripción Silicon N-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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RQK2001HQDQA
Silicon N Channel MOS FET
Power Switching
Features
High drain to source voltage and Low gate drive
VDSS : 200 V and VGSS : ±30 V
Low drive current
High speed switching
Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Note: Marking is "HQ".
Preliminary Datasheet
R07DS0311EJ0300
Rev.3.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body - drain diode reverse drain current
Channel dissipation
Thermal resistance
VDSS
VGSS
ID
ID(pulse) Note1
IDR
Pch Note2
Rth(ch-a) Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, Duty cycle 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
200
±30
0.4
1.6
0.4
0.8
156
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C / W
°C
°C
R07DS0311EJ0300 Rev.3.00
Jan 10, 2014
Page 1 of 8

1 page




RQK2001HQDQA pdf
RQK2001HQDQA
Switching Characteristics
1000
tf
VGS = 10 V, VDD = 100 V
Rg = 50 Ω, duty 1 %
Tc = 25°C
100
td(off)
td(on)
10
tr
1
0.01
0.1
Drain Current ID (A)
1
Input Capacitance vs.
Gate to Source Voltage
80
75
70
65
60
55 VDS = 0
f = 1 MHz
50
–10 –8 –6 –4 –2 0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
1.0
VGS = 0
0.8
ID = 10 mA
0.6
0.4
1 mA
0.2
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
100
VGS = 0 V
f = 1 MHz
Ciss
10
Coss
1
0 10
Crss
20 30 40 50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
1.6
1.4 Pulse Test
Tc = 25°C
1.2
1.0
0.8 10, 15, 20, 25 V
0.6 VGS = –25, –20, –15 –10, –5, 0 V
0.4 5 V
0.2
0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
R07DS0311EJ0300 Rev.3.00
Jan 10, 2014
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