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PDF RQK2501YGDQA Data sheet ( Hoja de datos )

Número de pieza RQK2501YGDQA
Descripción Silicon N-Channel MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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RQK2501YGDQA
Silicon N Channel MOS FET
Power Switching
Features
High drain to source voltage and Low gate drive
VDSS : 250 V and 2.5 V gate drive
Low drive current
High speed switching
Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
1
2
Preliminary Datasheet
R07DS0312EJ0400
Rev.4.00
Jan 10, 2014
3
D
2
G
S
1
1. Source
2. Gate
3. Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse) Note1
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 μs, Duty cycle 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
Ratings
250
±10
0.4
1.6
0.4
0.8
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
Page 1 of 8

1 page




RQK2501YGDQA pdf
RQK2501YGDQA
Dynamic Input Characteristics
300 12
VDD = 50 V
100 V
200 200 V
ID = 0.4 A 10
Tc = 25°C
8
6
100 4
VDD = 200 V
100 V
2
50 V
00
0 4 6 8 10
Gate Charge Qg (nc)
1000
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0 V
f = 1 MHz
Ciss
10 Coss
1
0 30
Crss
60 90 120 150
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
1.6
1.4
1.2
1.0
0.8
0.6 VGS = 0, –2.5, –4, –10 V
0.4
2.5, 4, 10 V
0.2
0
0 0.4 0.8
Pulse Test
Tc = 25°C
1.2 1.6 2.0
Source to Drain Voltage VSD (V)
1000
Preliminary
Switching Characteristics
VGS = 4 V, VDD = 125 V
Rg = 10 Ω, duty 1 %
Tc = 25°C
100
td(off)
tf
tr
10
0.01
td(on)
0.1 1
Drain Current ID (A)
10
Input Capacitance vs.
Gate to Source Voltage
420
380
340
300
260
220
180
–10 –8 –6 –4 –2 0
VDS = 0
f = 1MHz
2 4 6 8 10
Gate to Source Voltage VGS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.7
VGS = 0
0.6
0.5
ID = 10 mA
0.4
0.3 1 mA
0.2
0.1
0
–25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0312EJ0400 Rev.4.00
Jan 10, 2014
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