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Kexin - Fast Recovery diodes

Numéro de référence RS1JFH
Description Fast Recovery diodes
Fabricant Kexin 
Logo Kexin 





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RS1JFH fiche technique
SMD Type
Fast Recovery diodes
RS1AFH ~ RS1MFH
Diodes
Features
Low leakage current
Excellent stability
Guaranteed avalanche energy absorption capability
Glass passivated
High maximum operating temperature
12
PIN DESCRIPTION
1 Cathode
2 Anode
Weight17.6mg0.00062 o z
Simplified outline SOD-123FH
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
RS1A RS1B RS1D RS1G RS1J
FH FH FH FH F H
RS1K RS1M
FH FH
Unit
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
Maximum DC Blocking Voltage
Averaged Forward Current.TT=110
Peak Forward Surge Current Tj=25,VR=VRRMMax
VRRM 50 100 200 400 600 800 1000
VRSM 35 70 140 280 420 560 700 V
VR 50 100 200 400 600 800 1000
IFAV
1
A
IFSM
25
Thermal Resistance From Junction to Ambient (Note.1)
Rthj-a
(Note.2)
100
150 K/W
Thermal Resistance Junction to Tie-Point
Rthj-tp
27
Junction Temperature
Storage Temperature
Tj
Tstg
150
-50 to 150
Note.1 Device mounted on Al 2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 mm.
Note.2 Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 mm. For more
information please refer to the ‘General Part of associated Handbook’.
Electrical Characteristics Ta = 25
Parameter
Forward Votalge
Maximum DC Reverse Current
Reverse Recovery Time
Diode Capacitance
Symbol
Test Conditions
Min Typ Max Unit
VF IF=1A
1.3 V
VR=VRRMMax
IR
VR=VRRMMax ,T J =125
5
uA
50
IF = 0.5 A , IR = 1A, RS1A to RS1J
trr
IF = 0.5 A,IR=0.25A, RS1K and RS1M
250
ns
300
Cd VR=4V, f=1MHz
7 pF
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