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RT3C66M fiches techniques PDF

Isahaya Electronics Corporation - Silicon NPN Dual Transistor

Numéro de référence RT3C66M
Description Silicon NPN Dual Transistor
Fabricant Isahaya Electronics Corporation 
Logo Isahaya Electronics Corporation 





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RT3C66M fiche technique
PRPREELILMINIAMRY INARY
Notice:This is not a final specification
Some parametric are subject to change.
RT3C66M
Dual Transistor
For Differential Amplify Application
Silicon Npn Epitaxial Type
DESCRIPTION
RT3C66M is a sillicon NPN epitaxial type dual transistor.
It is designed for differential amplify application.
OUTLINE DRAWING
FEATURE
High Vceo Vceo=160V
Good two elements characteristics
hFE1/hFE2=1.0 typ
VBE1-VBE2=2mV typ
2.1
1.25
Unitmm
APPLICATION
For differential amplify application.
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
Tr1
③:COLLECTOR2
④:EMITTER2
Tr2
⑤:BASE2
:COLLECTOR1
JEITASC-88
JEDEC:-
MAXIMUM RATING (Ta=25) (Tr1 , Tr2.)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I CM Peak collector current
I C Collector current
PT Total allowance dissipation(Ta=25℃)
Tj Junction temperature
Tstg Storage temperature
180
6
160
200
100
200
+150
-55~+150
UNIT
V
V
V
mA
mA
mW
MARKING
654
.CJ E
123
ISAHAYA ELECTRONICS CORPORATION

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