(PDF) RT3P55M Datasheet

Número de pieza	RT3P55M
Descripción	Transistor
Fabricantes	Isahaya Electronics Corporation
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No Preview Available ! DESCRIPTION RT3P55M is compound transistor built with two RT1P144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit RT3P55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING Unit：mm ⑥ RTr1 ⑤ R1 ④ R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1, RTr2) SYMBOL VCBO VEBO VCEO VIN IC ICM PC Tj Tstg PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Input voltage Collector current Peak Collector current Collector dissipation（Total, Ta=25℃） Junction temperature Storage temperature RATING -50 -6 -50 -40 -100 -200 150 ＋150 -55～＋150 UNIT V V V V mA mA mW ℃ ℃ MARKING 654 .P5 5 １23 ISAHAYA ELECTRONICS CORPORATION 1 page

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PDF RT3P55M Data sheet ( Hoja de datos )