(PDF) RT3TBBM Datasheet

Número de pieza	RT3TBBM
Descripción	Transistor
Fabricantes	Isahaya Electronics Corporation
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No Preview Available ! PRELIMINARY RT3TBBM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION RT3TBBM is compound transistor built with RT1N231 chip and RT1P231 chip in SC-88 package. OUTLINE DRAWING Unit：mm FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit ⑥⑤④ RTr1 R1 R2 R2 R1 ①② RTr2 ③ TERMINAL CONNECTOR ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥:COLLECTOR1 JEITA：SC-88 MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP) SYMBOL PARAMETER RATING VCBO Collector to Base voltage 50 VEBO Emitter to Base voltage 10 VCEO Collector to Emitter voltage 50 VIN Input voltage 12 IC Collector current 100 ICM Peak Collector current 200 PC Collector dissipation（Total, Ta=25℃） 150 Tj Junction temperature ＋150 Tstg Storage temperature -55～＋150 ※PNP built in transistor of ”－”sign is abbreviation. UNIT V V V V mA mA mW ℃ ℃ MARKING ⑥⑤④ .T B B ①②③ ISAHAYA ELECTRONICS CORPORATION 1 page

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PDF RT3TBBM Data sheet ( Hoja de datos )