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RT3TDDM fiches techniques PDF

Isahaya Electronics Corporation - Transistor

Numéro de référence RT3TDDM
Description Transistor
Fabricant Isahaya Electronics Corporation 
Logo Isahaya Electronics Corporation 





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RT3TDDM fiche technique
PRELIMINARY
RT3TDDM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TBBM is compound transistor built with RT1N237
chip and RT1P237 chip in SC-88 package.
OUTLINE DRAWING
Unitmm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
RTr1
⑤④
R1
R2
R2
R1
①②
RTr2
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
:COLLECTOR1
JEITASC-88
MAXIMUM RATING (Ta=25) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
6
VCEO
Collector to Emitter voltage
50
VIN Input voltage
12
IC Collector current
100
ICM Peak Collector current
200
PC Collector dissipationTotal, Ta=25℃)
150
Tj Junction temperature
150
Tstg Storage temperature
-55~+150
PNP built in transistor of ””sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
MARKING
⑥⑤④
.T D D
①②③
ISAHAYA ELECTRONICS CORPORATION

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