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Numéro de référence | RT3TDDM | ||
Description | Transistor | ||
Fabricant | Isahaya Electronics Corporation | ||
Logo | |||
PRELIMINARY
RT3TDDM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TBBM is compound transistor built with RT1N237
chip and RT1P237 chip in SC-88 package.
OUTLINE DRAWING
Unit:mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥
RTr1
⑤④
R1
R2
R2
R1
①②
RTr2
③
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
JEITA:SC-88
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
6
VCEO
Collector to Emitter voltage
50
VIN Input voltage
12
IC Collector current
100
ICM Peak Collector current
200
PC Collector dissipation(Total, Ta=25℃)
150
Tj Junction temperature
+150
Tstg Storage temperature
-55~+150
※PNP built in transistor of ”-”sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
℃
℃
MARKING
⑥⑤④
.T D D
①②③
ISAHAYA ELECTRONICS CORPORATION
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Pages | Pages 4 | ||
Télécharger | [ RT3TDDM ] |
No | Description détaillée | Fabricant |
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