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PDF RT3TGGM Data sheet ( Hoja de datos )
| Número de pieza | RT3TGGM | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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PRELIMINARY
RT3TGGM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TGGM is composite transistor built with RT1N432
chip and RT1P432 chip in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
2.1
1.25
①
②
③
⑥
⑤
④
Unit：mm
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
⑥⑤④
RTr1
R1
R2
R2
R1
①②
RTr2
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
JEDEC：－
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
UNIT
MARKING
VCBO Collector to Base voltage
50 V
VEBO
VCEO
Emitter to Base voltage
Collector to Emitter voltage
7V
50 V
65 4
VIN Input voltage
IC Collector current
ICM Peak Collector current
20 V
100 mA
200 mA
.TGG
PC Collector dissipation（Total）
Tj Junction temperature
Tstg Storage temperature
150
＋150
-55～＋150
mW
℃
℃
１23
※PNP built in transistor of ”－”sign is abbreviation.
ELECTRICAL CHARACTERISTICS (Ta=25℃) (RTr1_NPN, RTr2_PNP)
Symbol
Parameter
Test conditions
Limits
Min
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
IC=100µA,RBE=∞
VCB =50V,IE=0
VEB =5V,IC=0
VCE=5V,IC=10mA
IC=10mA,IB=0. 5mA
VCE=0.2V,IC=5mA
VCE=5V,IC=100µA
－
－
VCE=6V,IE=10mA
RTr1
RTr2
50
－
255
30
－
－
0.5
3.3
1.7
－
－
－
－
340
－
0.1
1.0
0.8
4.7
2.1
200
150
※PNP built in transistor of ”－”sign is abbreviation.
Max
－
0.1
493
－
0.3
1.8
－
6.1
2.6
－
－
Unit
V
µA
µA
－
V
V
V
kΩ
－
MHZ
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
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| PDF Descargar | [ Datasheet RT3TGGM.PDF ] | |
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