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PDF RTBN141AP1 Data sheet ( Hoja de datos )
| Número de pieza | RTBN141AP1 | |
| Descripción | Transistor | |
| Fabricantes | Isahaya Electronics Corporation | |
| Logotipo |  |
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PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
RTBN141AP1 is a one chip transistor
with built-in bias transistor.
FEATURE
・Built-in bias resistor （R1=10kΩ,R2=10kΩ）
・High collector current （IC=1A）
・Small package for easy mounting.
APPLICATION
Switching.
EQUAIVALENT CIRCUIT
C
B
R1
R2
E
〈SMALL-SIGNAL TRANSISTOR〉
RTBN141AP1
TRANSISTOR WITH RESISTOR
FOR SWITHING APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT：mm
4.6 MAX
1.6
1.5
E CB
0.53
MAX
1.5
3.0
0.48 MAX
0.4
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EMＥI:TエTEミRッタ
C：CＣＢO::LベLコEレーCTクスOタR
B：BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
VCBO
VEBO
VCEO
IC
I CM
PCM
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
80
10
60
1
2
500
＋150
-55～＋150
UNIT
V
V
V
A
A
mW
℃
℃
MARKING
Type Name
NL
The last number Marking month
of fisical year
Running No.
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
ICBO
VI(on)
VI(off)
ｈＦＥ1
ｈＦＥ2
ｈＦＥ3
R1
Collector cut off current
Input on voltage
Input off voltage
DC forward current gain1
DC forward current gain2
DC forward current gain3
Input resistor
VCE=60V，IE=0
VCE=0.2V，IC=0.1A
VCE=5V，IC=100μA
VCE=2V，IC=0.1A
VCE=2V，IC=0.5A
VCE=2V，IC=1A
―
LIMITS
MIN TYP MAX
― ― 0.1
― ― 5.0
0.3 ―
―
200 ―
―
300 ―
―
200 ―
―
7 10 13
UNIT
μA
V
V
―
―
―
ｋΩ
R2 Emitter-base resistor
―
7 10 13 ｋΩ
ISAHAYA ELECTRONICS CORPORATION
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet RTBN141AP1.PDF ] | |
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