|
|
PDF NP100N04NUJ Data sheet ( Hoja de datos )
| Número de pieza | NP100N04NUJ | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP100N04NUJ (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current rating: ID(DC) = ±100 A
• Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04NUJ–S18-AY ∗1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package
TO-262 (MP-25SK) TYP. 1.8g
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
40
±20
±100
±400
220
1.8
175
−55 to +175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
Notes: ∗1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Tch(peak) ≤ 150°C, RG = 25 Ω
0.68
83.3
°C/W
°C/W
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
1 page  
NP100N04NUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
VGS = 10 V
1 ID = 50 A
Pulsed
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
td(of f )
tf td(on)
tr
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1 10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
VGS = 10 V
100
0V
10
1
Pulsed
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VF(S-D) - Source to Drain Voltage - V
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
Crss
100
0.01
0.1
1
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
45
40
35
30
25
20
15
10
5
0
0
VDD = 32 V
20 V
8V
VGS
10
9
8
7
6
5
4
3
2
VDS ID = 100 A 1
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
1
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF - Drain Current - A
100
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP100N04NUJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP100N04NUJ | MOS FIELD EFFECT TRANSISTOR | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |