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PDF NP50P04SLG Data sheet ( Hoja de datos )
| Número de pieza | NP50P04SLG | |
| Descripción | MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | Renesas | |
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NP50P04SLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0241EJ0100
Rev.1.00
Feb 09, 2011
Description
The NP50P04SLG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 9.6 mΩ MAX. (VGS = −10 V, ID = −25 A)
⎯ RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
• Low input capacitance
• Gate to Source ESD protection diode built-in
Ordering Information
Part No.
LEAD PLATING
PACKING
NP50P04SLG-E1-AY ∗1
NP50P04SLG-E2-AY ∗1
Pure Sn (Tin)
Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
TO-252 (MP-3ZK)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗2
Single Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAS
EAS
Ratings
−40
m20
m50
m150
84
1.2
175
−55 to +175
37
136
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-C)
Rth(ch-A)
1.78 °C/W
125 °C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Starting Tch = 25°C, VDD = −20 V, RG = 25 Ω, VGS = −20 → 0 V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Page 1 of 6
1 page  
NP50P04SLG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
-75
VGS = −4.5 V
-25 25
−10 V
75
ID = −25 A
Pulsed
125 175
Tch - Channel Temperature - °C
1000
100
SWITCHING CHARACTERISTICS
td(off)
tr
10
VDD = −20 V
VGS = −10 V
RG = 0 Ω
1
-0.01
-0.1
tf
td(on)
-1 -10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
-1000
-100
VGS = −10 V
-10
-1 −5.0 V −4.5 V
-0.1
-0.01
0V
-0.001
-0.0001
0
0.2 0.4 0.6 0.8
Pulsed
1 1.2 1.4
VF(S-D) - Source to Drain Voltage - V
R07DS0241EJ0100 Rev.1.00
Feb 09, 2011
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10.00
Ciss
1.00
Coss
Cr ss
VGS = 0 V
f = 1 MHz
0.10
-0.01
-0.1
-1
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
-35
VDS
-30
-25
-20
-15
-10
VDD = −32 V
−20 V
−8 V
-15
-10
-5
-5
0
0
ID = −50 A
0
10 20 30 40 50 60 70 80 90 100
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
-0.1
VGS = 0 V
di/dt = −100 A/μs
-1 -10 -100
IF - Diode Forward Current - A
Page 5 of 6
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet NP50P04SLG.PDF ] | |
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