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Renesas - Silicon N-Channel MOS FET

Numéro de référence RJK0406JPE
Description Silicon N-Channel MOS FET
Fabricant Renesas 
Logo Renesas 





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RJK0406JPE fiche technique
RJK0406JPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 1.65 mtyp.
High current devices : ID = 160 A
Low input capacitance : Ciss = 6300 pF typ
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Tch = 25C, Rg 50
3. Tc = 25C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
I Note3
D
ID (pulse) Note1
I Note3
DR
IDR (pulse) Note1
I Note2
AP
E Note2
AR
Pch Note3
Tch Note4
Tstg
Thermal Impedance Characteristics
Channel to case thermal impedance ch-c: 0.781C/W
Preliminary Datasheet
R07DS0335EJ0200
Rev.2.00
Dec 19, 2011
D
1. Gate
2. Drain
3. Source
4. Drain
S
Value
40
+20 / –5
160
640
160
640
70
653
192
175
–55 to +150
(Ta = 25C)
Unit
V
V
A
A
A
A
A
mJ
W
C
C
R07DS0335EJ0200 Rev.2.00
Dec 19, 2011
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