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PDF SM10100DS1 Data sheet ( Hoja de datos )
| Número de pieza | SM10100DS1 | |
| Descripción | Schottky Barrier Rectifiers | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SM10100DS1
VOLTAGE 100 V
10A Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
TO-252(D-PACK)
Pin2
Pin1 Pin3
Configuration
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.30 REF.
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.80 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
MAXIMUM RATINGS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
PARAMETER
SYMBOL
RATING
Maximum Repetitive Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load
IF
IFSM
Maximum Instantaneous Forward
Voltage @10A
TA=25°C
TA=100°C
VF
Maximum Reverse Current at Rated
VRRM Per Diode 2
Typical Junction Capacitance 1
TA=25°C
TA=100°C
IR
CJ
Voltage Rate Of Change
dv/dt
Typical Thermal Resistance 3
RθJC
Operating & Storage Temperature
TJ ,TSTG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C..
2. Plus test: 300uS Pulse width, 2% duty cycle.
3. Thermal Resistance Junction to Case. FR4 Board Heat sink size: 10*10*0.2mm.
100
70
100
10
150
0.85
0.72
0.1
5
580
10000
10
-55~150
UNIT
V
V
V
A
A
V
mA
pF
V/us
°C/W
°C
http://www.SeCoSGmbH.com/
20-Nov-2014 Rev. A
Any changes of specification will not be informed individually.
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