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PDF STS12N3LLH5 Data sheet ( Hoja de datos )
| Número de pieza | STS12N3LLH5 | |
| Descripción | N-channel MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STS12N3LLH5
Features
N-channel 30 V, 0.0068 Ω, 12 A, SO-8
STripFET™ V Power MOSFET
Datasheet — production data
Type
STS12N3LLH5
VDSS
30 V
RDS(on)
max
< 0.0075 Ω
ID
12 A (1)
1. The value is rated according Rthj-pcb
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ Very low switching gate charge
■ High avalanche ruggedness
■ Low gate drive power losses
5
8
4
1
SO-8
Application
■ Switching applications
Figure 1. Internal schematic diagram
Description
This device is an N-channel Power MOSFET
developed using STMicroelectronics’
STripFET™V technology. The device has been
optimized to achieve very low on-state resistance,
contributing to an FOM that is among the best in
its class.
Table 1. Device summary
Order code
STS12N3LLH5
Marking
12D3L
Package
SO-8
Packaging
Tape and reel
June 2012
This is information on a product in full production.
Doc ID 17152 Rev 3
1/13
www.st.com
13
1 page  
STS12N3LLH5
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 12 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A,
di/dt = 100 A/µs,
VDD= 25 V, Tj=150 °C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min Typ. Max Unit
- 12 A
- 48 A
- 1.1 V
22
- 15
1.4
ns
nC
A
Doc ID 17152 Rev 3
5/13
5 Page 
STS12N3LLH5
Figure 19. SO-8 drawing
Package mechanical data
0016023_Rev_E
Doc ID 17152 Rev 3
11/13
11 Page | ||
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