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NCE2025S fiches techniques PDF

NCE Power Semiconductor - N-Channel Enhancement Mode Power MOSFET

Numéro de référence NCE2025S
Description N-Channel Enhancement Mode Power MOSFET
Fabricant NCE Power Semiconductor 
Logo NCE Power Semiconductor 





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NCE2025S fiche technique
http://www.ncepower.com
Pb Free Product
NCE2025S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE2025S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =20V,ID =25A
RDS(ON) < 4m@ VGS=4.5V
RDS(ON) < 6m@ VGS=2.5V
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Schematic diagram
Application
DC/DC Converter
Battery protection
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE2025S
NCE2025S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TA=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
20
±12
25
17.7
140
2.5
-55 To 150
Unit
V
V
A
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
50 /W
Wuxi NCE Power Semiconductor Co., Ltd
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