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Diotec - Silicon Rectifier Diodes

Numéro de référence P1200A
Description Silicon Rectifier Diodes
Fabricant Diotec 
Logo Diotec 





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P1200A fiche technique
P1200A ... P1200G
Version 2012-10-01
Ø 8 ±0.1
Type
Ø 1.2 ±0.05
Dimensions - Maße [mm]
P1200A ... P1200G
Silicon Rectifier Diodes
Silizium-Gleichrichterdioden
Nominal Current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
12 A
50...400 V
Ø 8 x 7.5 [mm]
P600 Style
1.3 g
Maximum ratings
Type
Typ
P1200A
P1200B
P1200D
P1200G
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
50
100
200
400
Grenzwerte
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
50
100
200
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
at reduced reverse voltage
bei reduzierter Sperrspannung
Storage temperature – Lagerungstemperatur
TA = 50°C
f > 15 Hz
TA = 25°C
TA = 25°C
IFAV
IFRM
IFSM
i2t
VR ≤ 80% VRRM
VR ≤ 20% VRRM
Tj
Tj
TS
12 A 1)
80 A 1)
400/450 A
800 A2s
-50...+150°C
-50...+200°C
-50...+175°C
1 Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
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