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PDF SMK1080FD Data sheet ( Hoja de datos )
| Número de pieza | SMK1080FD | |
| Descripción | Advanced N-Ch Power MOSFET | |
| Fabricantes | KODENSHI | |
| Logotipo |  |
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SMK1080FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=800V
Low gate charge: Qg=58nC (Typ.)
Low drain-source On resistance: RDS(on)=1.1Ω (Max.)
RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1080FD
SMK1080
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK
SM△ΔKY1YM0MD8DD0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Date)
Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25C
Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating
800
30
10
6.32
40
800
10
4.8
48
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
Rev. date: 14-NOV-12
KSD-T0O113-000
www.auk.co.kr
1 of 8
1 page  
Fig. 12 Gate Charge Test Circuit & Waveform
SMK1080FD
Fig. 13 Resistive Switching Test Circuit & Waveform
Fig. 14 EAS Test Circuit & Waveform
Rev. date: 14-NOV-12
KSD-T0O113-000
www.auk.co.kr
5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SMK1080FD.PDF ] | |
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