DataSheetWiki


SNN01Z10Q fiches techniques PDF

KODENSHI - Logic level N-CH Power MOWFET

Numéro de référence SNN01Z10Q
Description Logic level N-CH Power MOWFET
Fabricant KODENSHI 
Logo KODENSHI 





1 Page

No Preview Available !





SNN01Z10Q fiche technique
SNN01Z10Q
Logic Level N-Ch Power MOSFET
Logic Level Gate Drive Application
Features
Logic level gate drive
Max. RDS(ON) = 0.24Ω at VGS = 10V, ID = 0.5A
Low RDS(on) provides higher efficiency
ESD protected: 2000V (HBM: ±1000V)
Halogen free and RoHS compliant device
Ordering Information
Part Number
Marking
Package
SNN01Z10Q
SNN01Z10Q
SOT-223
G
DS
D
SOT-223
Marking Information
SNN01Z10Q
YWW
Column 1: Device Code
Column 2: Production Information
e.g.) YWW
-. Y: Year Code
-. WW: Week Code
Absolute maximum ratings (TC=25°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single pulsed avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25°C
Tc=100°C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating
100
±20
1
0.63
4
35
1
0.18
1.8
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
°C
°C
Rev. date: 24-NOV-11
KSD-T5A011-000
www.auk.co.kr
1 of 8

PagesPages 8
Télécharger [ SNN01Z10Q ]


Fiche technique recommandé

No Description détaillée Fabricant
SNN01Z10Q Logic level N-CH Power MOWFET KODENSHI
KODENSHI

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche